M. O. Aboelfotoh - Concepedia

Author

M. O. Aboelfotoh

IBM Research - Thomas J. Watson Research Center

Also Known As

M O Aboelfotoh, M. O. AboelFotoh, M. O. Aboelfotoh, M. Osama Aboelfotoh, M.O Aboelfotoh, M.O. Aboelfotoh

101

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center North Carolina State University IBM (United States)KTH Royal Institute of Technology King Fahd University of Petroleum and Minerals

About

M. O. Aboelfotoh is an author at IBM Research - Thomas J. Watson Research Center specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	55	1.9K
2	Applied Physics	26	53	1.8K
3	Chemistry	10	11	503
4	Natural Sciences	3	3	161
5	Chemical Engineering	1	1	11

M. O. Aboelfotoh

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Formation, oxidation, electronic, and electrical properties of copper silicides A. Cros, M. O. Aboelfotoh, K. N. Tu Journal of Applied Physics Materials EngineeringSemiconductorsMaterials ScienceEngineeringElectron Microscopy	1990	203
Influence of secondary-electron emission from MgO surfaces on voltage-breakdown curves in Penning mixtures for insulated-electrode discharges M. O. Aboelfotoh, J. Lorenzen Journal of Applied Physics Mgo SurfacesEngineeringGlow DischargeBand GapHigh Voltage Engineering	1977	92
Unusually low resistivity of copper germanide thin films formed at low temperatures L. Krusin‐Elbaum, M. O. Aboelfotoh Applied Physics Letters Materials ScienceElectrical EngineeringLow TemperaturesElectronic MaterialsEngineering	1991	82
Temperature dependence of the Schottky-barrier height of tungsten on n-type and p-type silicon M. O. Aboelfotoh Solid-State Electronics Materials ScienceSemiconductor DeviceEngineeringApplied PhysicsTemperature Dependence	1991	78
Schottky-barrier behavior of copper and copper silicide on<i>n</i>-type and<i>p</i>-type silicon M. O. Aboelfotoh, A. Cros, Bengt Svensson, Physical review. B, Condensed matter Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	1990	78
Defect energy levels in electron-irradiated and deuterium-implanted<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>silicon carbide M. O. Aboelfotoh, J. P. Doyle Physical review. B, Condensed matter EngineeringNuclear PhysicsRadiation Materials ScienceDefect ToleranceSemiconductors	1999	77
Electrical transport in thin films of copper silicide M. O. Aboelfotoh, L. Krusin‐Elbaum Journal of Applied Physics Materials ScienceElectrical EngineeringMaterial AnalysisEngineeringElectromigration Technique	1991	77
Influence of thin interfacial silicon oxide layers on the Schottky-barrier behavior of Ti on Si(100) M. O. Aboelfotoh Physical review. B, Condensed matter Materials ScienceElectrical EngineeringEngineeringBarrier HeightNanoelectronics	1989	73
Copper passivation of boron in silicon and boron reactivation kinetics M. O. Aboelfotoh, B. G. Svensson Physical review. B, Condensed matter Boron AcceptorsBoron NitrideEngineeringPhysicsNanoelectronics	1991	54
Novel low-resistance ohmic contact to <i>n</i>-type GaAs using Cu3Ge M. O. Aboelfotoh, Chung-Han Lin, J. M. Woodall Applied Physics Letters SemiconductorsAbrupt InterfaceElectrical EngineeringSemiconductor TechnologyEngineering	1994	47

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