The Peak Pairs algorithm for strain mapping from HRTEM images

Pedro L. Galindo, S. Kret, Ana M. Sánchez, +6

Ultramicroscopy

Geometric ModelingImage AnalysisEngineeringStrain LocalizationCivil Engineering +9

Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

E. Antolín, C.D. Farmer, P.G. Linares, +6

Journal of Applied Physics

Ii-vi SemiconductorElectrical EngineeringEngineeringPhysicsThick Gaas Spacer +9

Aqueous Near‐Infrared Fluorescent Composites Based on Apoferritin‐Encapsulated PbS Quantum Dots

B. Hennequin, Lyudmila Turyanska, T. Ben, +6

Advanced Materials

Materials ScienceNanoparticlesApoferritin Protein CagesEngineeringProtein Nanoparticles +13

Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)

Daniel Granados, J. M. Garcı́a, T. Ben, +1

Applied Physics Letters

Materials ScienceQuantum ScienceIi-vi SemiconductorOptical MaterialsEngineering +13

Identification of III–N nanowire growth kinetics via a marker technique

R. Songmuang, T. Ben, B. Daudin, +2

Nanotechnology

Aluminium NitrideWide-bandgap SemiconductorEngineeringNw Vertical GrowthMarker Technique +17

Effect of N2 and H2 plasma treatments on band edge emission of ZnO microrods

J. Rodrigues, T. Holz, Rabie Fath Allah, +5

Scientific Reports

Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange

D. Fuster, Marı́a Ujué González, L. González, +5

Applied Physics Letters

EngineeringSelf-assembled Inas∕inpSemiconductor NanostructuresQuantum ComputingNanoelectronics +17

InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

I. Ramiro, E. Antolín, Matthew J. Steer, +10

Wide-bandgap SemiconductorIi-vi SemiconductorElectrical EngineeringEngineeringAl Content +10

Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

Mazliana Ahmad Kamarudin, M. Hayne, Robert J. Young, +3

Physical Review B

EngineeringExcitation Energy TransferSemiconductor NanostructuresIi-vi SemiconductorNanoelectronics +17

Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

Daniel Carvalho, Knut Müller‐Caspary, Marco Schowalter, +8

Scientific Reports