Tomos Thomas

Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over‐50%‐efficient lattice‐matched quad‐junction solar cells

Kasidit Toprasertpong, Hiromasa Fujii, Tomos Thomas et al. · Progress in Photovoltaics Research and Applications · 2015 · 71 citations · Full text

Wide-bandgap Semiconductor, Engineering, Bandgap Mqw Cell +19

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

Tomos Thomas, A. Mellor, Nicholas P. Hylton et al. · Semiconductor Science and Technology · 2015 · 57 citations

Multi-junction Solar Cells, Electrical Engineering, Engineering +13

Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices

Robert D. Richards, A. Mellor, Faezah Harun et al. · Solar Energy Materials and Solar Cells · 2017 · 45 citations · Full text

Wide-bandgap Semiconductor, Engineering, Semiconductor Materials +17

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

Diego Alonso‐Álvarez, Tomos Thomas, M. Führer et al. · Applied Physics Letters · 2014 · 30 citations · Full text

Categoryquantum Electronics, Engineering, Optoelectronic Devices +21

Practical Limits of Multijunction Solar Cell Performance Enhancement From Radiative Coupling Considering Realistic Spectral Conditions

Ngai Lam Alvin Chan, Tomos Thomas, M. Führer et al. · IEEE Journal of Photovoltaics · 2014 · 26 citations

Solar Physics (Heliophysics), Electrical Engineering, Practical Limits +13