Rajarshi Roy Chaudhuri

On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

Rajarshi Roy Chaudhuri, Vipin Joshi, Sayak Dutta Gupta et al. · IEEE Transactions on Electron Devices · 2021 · 33 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +15

Part I: Physical Insights Into Dynamic <i>R</i> _ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

Sayak Dutta Gupta, Vipin Joshi, Rajarshi Roy Chaudhuri et al. · IEEE Transactions on Electron Devices · 2021 · 30 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs—Part II

Vipin Joshi, Sayak Dutta Gupta, Rajarshi Roy Chaudhuri et al. · IEEE Transactions on Electron Devices · 2020 · 19 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Breakdown Characteristics +13

Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs—Part I

Vipin Joshi, Sayak Dutta Gupta, Rajarshi Roy Chaudhuri et al. · IEEE Transactions on Electron Devices · 2020 · 18 citations

Wide-bandgap Semiconductor, Device Design Guidelines, Electrical Engineering +14

Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance

Vipin Joshi, Rajarshi Roy Chaudhuri, Sayak Dutta Gupta et al. · IEEE Transactions on Electron Devices · 2023 · 16 citations

Dynamic On-resistance, Wide-bandgap Semiconductor, Electrical Engineering +15