Jeong Hyuk Yim

Fabrication and characterization of 4H-SiC planar MESFETs

Hoon Joo Na, Jeong Hyun Moon, Jeong Hyuk Yim et al. · Microelectronic Engineering · 2005 · 44 citations

Electrical Engineering, Engineering, Applied Physics +4

Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide

Changhyun Kim, Jeong Hyun Moon, Jeong Hyuk Yim et al. · Applied Physics Letters · 2012 · 29 citations

Engineering, Nitric Oxide, Semiconductor Device +16

Electrical Properties of the La<sub>2</sub>O<sub>3</sub>/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)<sub>3</sub> and H<sub>2</sub>O

Jeong Hyun Moon, Da Il Eom, Sang Yong No et al. · Materials science forum · 2006 · 24 citations

Engineering, Electrical Properties, Semiconductor Device +16

Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer

Ho Keun Song, Sun Young Kwon, Han Seok Seo et al. · Applied Physics Letters · 2006 · 21 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Effect of Postoxidation Annealing on High Temperature Grown SiO[sub 2]/4H-SiC Interfaces

Jeong Hyun Moon, Jeong Hyuk Yim, Han Seok Seo et al. · Journal of The Electrochemical Society · 2009 · 16 citations

Materials Engineering, Materials Science, Electrical Engineering +12