Applied Physics Letters · 2006 · 21 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingElectronic Material CharacterizationSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesCarrier ConcentrationHomoepitaxial GrowthIn-situ DopingMetal-organic Chemical Vapor DepositionSchottky Barrier ContactsSemiconductor CharacterizationSilicon CarbideSilicon Carbide (Sic) Materials
The authors attempted to grow a semi-insulating silicon carbide (SiC) epitaxial layer by in situ iron doping. The homoepitaxial growth of the iron-doped 4H-SiC layer was performed by metal-organic chemical vapor deposition using the organo-silicon precursor bis(trimethylsilylmethane) (C7H20Si2) and the metal-organic precursor t-butylferrocene (C14H17Fe). For the measurement of the resistivity of the iron-doped 4H-SiC epilayers, the authors used the on resistance of Schottky barrier diode. Based on the measurement of the on resistance, it is shown that the free carrier concentration was decreased with increasing partial pressure of t-butylferrocene. The resistivity of the iron-doped 4H-SiC epilayer was about 108Ωcm.
18