Yuan-Jen Lee

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

Luc Thomas, Guenole Jan, Huanlong Liu et al. · Journal of Applied Physics · 2014 · 242 citations

Engineering, Computer Engineering, Materials Science +17

High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer

Guenole Jan, Yu-Jen Wang, Takahiro Moriyama et al. · Applied Physics Express · 2012 · 88 citations

Natural Sciences, Materials Science, Physics +17

Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories

Guenole Jan, Luc Thomas, Son Le et al. · 2014 · 63 citations

Engineering, Computer Engineering, Electrical Engineering +15

A Reflow-capable, Embedded 8Mb STT-MRAM Macro with 9nS Read Access Time in 16nm FinFET Logic CMOS Process

Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang et al. · 2020 · 45 citations

Engineering, Computer Engineering, Electrical Engineering +15

Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

Jodi Iwata-Harms, Guenole Jan, S. Serrano-Guisan et al. · Scientific Reports · 2019 · 43 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17