Simon Hertenberger

Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

Simon Hertenberger, Daniel Rudolph, M. Bichler et al. · Journal of Applied Physics · 2010 · 161 citations

Engineering, Materials Engineering, Electronic Materials +9

Direct Observation of a Noncatalytic Growth Regime for GaAs Nanowires

Daniel Rudolph, Simon Hertenberger, S. Bolte et al. · Nano Letters · 2011 · 131 citations

Natural Sciences, Materials Science, Physics +17

Spontaneous Alloy Composition Ordering in GaAs-AlGaAs Core–Shell Nanowires

Daniel Rudolph, S. Funk, Markus Döblinger et al. · Nano Letters · 2013 · 130 citations

Natural Sciences, Materials Engineering, Materials Science +17

Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy

Gregor Koblmüller, Simon Hertenberger, Kristijonas Vizbaras et al. · Nanotechnology · 2010 · 122 citations

Natural Sciences, Materials Science, Physics +17

Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

Simon Hertenberger, Daniel Rudolph, S. Bolte et al. · Applied Physics Letters · 2011 · 69 citations

Natural Sciences, Materials Science, Physics +17