L. Aucoin

A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications

Jong‐Chin Huang, P. Saledas, J.P. Wendler et al. · IEEE Electron Device Letters · 1993 · 40 citations

Wide-bandgap Semiconductor, Engineering, Integrated Circuits +17

Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors

Y.A. Tkachenko, C.J. Wei, James C. M. Hwang et al. · 2002 · 36 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +11

One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching

S. Shanfield, A. Platzker, L. Aucoin et al. · 2003 · 30 citations

Semiconductor Technology, Electrical Engineering, Dry First Recess +13

A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier

W. Boulais, R.S. Donahue, A. Platzker et al. · 2002 · 23 citations

Microwave Circuits, Electrical Engineering, Millimeter Wave Technology +12

Large periphery, high power pseudomorphic HEMTs

L. Aucoin, S. Bouthilette, A. Platzker et al. · 1993 · 20 citations

Low-power Electronics, Electrical Engineering, Engineering +12