Benedict Ofuonye

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Benedict Ofuonye, Jaseun Lee, Minjun Yan et al. · Semiconductor Science and Technology · 2014 · 124 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Ohmic contacts to n+-GaN capped AlGaN∕AlN∕GaN high electron mobility transistors

Liang Wang, Fitih M. Mohammed, Benedict Ofuonye et al. · Applied Physics Letters · 2007 · 19 citations · Full text

Materials Engineering, Aluminium Nitride, Electrical Engineering +13

Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure

Jaesun Lee, Minjun Yan, Benedict Ofuonye et al. · physica status solidi (a) · 2011 · 16 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

Effects of salty-developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense pattern transfer

Mian Yan, J. Lee, Benedict Ofuonye et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 12 citations

Engineering, Integrated Circuits, Chemistry +18