Ahmet Faruk Özdemir

The double Gaussian distribution of barrier heights in Au/<i>n</i>-GaAs Schottky diodes from<i>I</i>–<i>V</i>–<i>T</i>characteristics

Ahmet Faruk Özdemir, A. Türüt, Ali Kökçe · Semiconductor Science and Technology · 2006 · 95 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

Ç. Ş. Güçlü, Ahmet Faruk Özdemir · Applied Physics A · 2016 · 71 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +7

Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Ç. Ş. Güçlü, Ahmet Faruk Özdemir, Abdulkerim Karabulut et al. · Materials Science in Semiconductor Processing · 2018 · 67 citations

Electrical Engineering, Engineering, Physics +8

The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements

Mohammad Hussein Al-Dharob, Havva Elif Lapa, Ali Kökçe et al. · Materials Science in Semiconductor Processing · 2018 · 62 citations

Semiconductor Technology, Electrical Engineering, Engineering +7

The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements

Mohammad Hussein Al-Dharob, Ali Kökçe, Durmuş Ali Aldemir et al. · Journal of Physics and Chemistry of Solids · 2020 · 41 citations

Materials Science, Semiconductor Technology, Electrical Engineering +8