Ç. Ş. Güçlü

Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

Ç. Ş. Güçlü, Ahmet Faruk Özdemir · Applied Physics A · 2016 · 71 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +7

Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Ç. Ş. Güçlü, Ahmet Faruk Özdemir, Abdulkerim Karabulut et al. · Materials Science in Semiconductor Processing · 2018 · 67 citations

Electrical Engineering, Engineering, Physics +8

Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

Ç. Ş. Güçlü, Esra Erbilen Tanrıkulu, Murat Ulusoy et al. · Journal of Materials Science Materials in Electronics · 2024 · 35 citations · Full text

Engineering, Conductance Method, Conductance Measurements +20

A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z–V) measurements

Ç. Ş. Güçlü, Esra Erbilen Tanrıkulu, A. Dere et al. · Journal of Materials Science Materials in Electronics · 2023 · 29 citations

Materials Science, Semiconductors, Electrical Engineering +12

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

Ç. Ş. Güçlü, Ali Kökçe, Ş. Altındal · Acta Physica Polonica A · 2016 · 27 citations · Full text