Jibesh Kanti Saha

Impact of channel length, gate insulator thickness, gate insulator material, and temperature on the performance of nanoscale FETs

Jibesh Kanti Saha, Nitish Chakma, Mehedhi Hasan · Journal of Computational Electronics · 2018 · 26 citations

Device Modeling, Electrical Engineering, Semiconductor Device +10

Fabrication of back-illuminated, fully depleted charge-coupled devices

S. Holland, Kyle Dawson, N. Palaio et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2007 · 25 citations

Electrical Engineering, Engineering, Electronic Engineering +4

Effect of doping profile variation on nanoscale cylindrical gate carbon nanotube field-effect transistor: a computational study using nonequilibrium Green’s function formalism

Muntasir Mahdi, Md Anik Hossain, Sazzad Hussain et al. · Semiconductor Science and Technology · 2020 · 13 citations

Engineering, Nanodevices, Carbon Nanotechnology +21

Performance enhancement of charge plasma-based junctionless TFET (JL-TFET) using stimulated n-pocket and heterogeneous gate dielectric

Sazzad Hussain, Nafis Mustakim, Mehedhi Hasan et al. · Nanotechnology · 2021 · 12 citations

Impact of scaling channel length on the performances of nanoscale FETs

Jibesh Kanti Saha, Nitish Chakma, Mohd. Hasan · 2016 · 11 citations