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Impact of channel length, gate insulator thickness, gate insulator material, and temperature on the performance of nanoscale FETs

Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsElectronic EngineeringNanotechnologyApplied PhysicsGate Insulator ThicknessGate Insulator MaterialBias Temperature InstabilityElectrical InsulationChannel Length