Concepedia

A.A. Vasil'ev

AV

36

Publications

871

Citations

18

H-Index

1983

Active since

Affiliations

National University of Science and Technology(Current)

University of Florida

Institute of Microelectronics Technology and High Purity Materials

Korea University

Frumkin Institute of Physical Chemistry and Electrochemistry

A.A. Vasil'ev is an author at National University of Science and Technology specializing in applied physics, engineering, and physics.

Top concepts

EngineeringApplied PhysicsPhysicsMaterial ScienceElectrical EngineeringSemiconductorsChemistrySurface ScienceNatural SciencesOptical Materials

Publications per year

1983–2024

36

Publications

36

Experimental estimation of electron–hole pair creation energy in <b> <i>β</i> </b>-Ga2O3

E. B. Yakimov, A. Y. Polyakov, Ivan Shchemerov et al. · Applied Physics Letters · 2021 · 55 citations

Wide-bandgap Semiconductor, Engineering, Experimental Estimation +18

Hydrogen plasma treatment of <b> <i>β</i> </b>-Ga2O3: Changes in electrical properties and deep trap spectra

A. Y. Polyakov, In‐Hwan Lee, N. B. Smirnov et al. · Applied Physics Letters · 2019 · 52 citations

Engineering, Chemistry, Electrical Properties +17

Editors’ Choice—Electrical Properties and Deep Traps in α-Ga<sub>2</sub>O<sub>3</sub>:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy

A. Y. Polyakov, E. B. Yakimov, N. B. Smirnov et al. · ECS Journal of Solid State Science and Technology · 2020 · 51 citations · Full text

Engineering, Chemistry, Semiconductors +19

Defects at the surface of β-Ga2O3 produced by Ar plasma exposure

A. Y. Polyakov, In‐Hwan Lee, N. B. Smirnov et al. · APL Materials · 2019 · 50 citations · Full text

Deep Acceptors, Engineering, Optoelectronic Devices +16

Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov et al. · APL Materials · 2019 · 48 citations · Full text

Semiconductors, Epitaxial Growth, Optical Materials +14

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