A. Thamm

Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

O. Brandt, R. Muralidharan, Patrick Waltereit et al. · Applied Physics Letters · 1999 · 92 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Overview of dual damascene integration schemes in Cu BEOL integration

J. Kriz, C. Angelkort, Markus Czekalla et al. · Microelectronic Engineering · 2008 · 44 citations

Materials Science, Cu Beol Integration, Materials Engineering +3

Reactive molecular-beam epitaxy of GaN layers directly on 6H–SiC(0001)

A. Thamm, O. Brandt, Yasushi Takemura et al. · Applied Physics Letters · 1999 · 42 citations · Full text

Semiconductors, Materials Science, Materials Engineering +11

Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy

U. Behn, A. Thamm, O. Brandt et al. · Journal of Applied Physics · 2000 · 33 citations

Wide-bandgap Semiconductor, Engineering, Photoreflectance Spectroscopy +19

Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy

K. H. Ploog, O. Brandt, R. Muralidharan et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 28 citations

Materials Science, Materials Engineering, Electrical Engineering +12