Muya Chang

29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification

Jong‐Hyeok Yoon, Muya Chang, Win-San Khwa et al. · 2021 · 82 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding

Jong‐Hyeok Yoon, Muya Chang, Win-San Khwa et al. · IEEE Journal of Solid-State Circuits · 2022 · 54 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

A 40nm 64kb 26.56TOPS/W 2.37Mb/mm²RRAM Binary/Compute-in-Memory Macro with 4.23x Improvement in Density and >75% Use of Sensing Dynamic Range

Samuel Spetalnick, Muya Chang, Brian Crafton et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 54 citations

Non-volatile Memory, Memory Technologies, Engineering +20

A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection

Jong‐Hyeok Yoon, Muya Chang, Win-San Khwa et al. · IEEE Journal of Solid-State Circuits · 2021 · 52 citations

Non-volatile Memory, Electrical Engineering, Engineering +15

A 40nm 60.64TOPS/W ECC-Capable Compute-in-Memory/Digital 2.25MB/768KB RRAM/SRAM System with Embedded Cortex M3 Microprocessor for Edge Recommendation Systems

Muya Chang, Samuel Spetalnick, Brian Crafton et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 47 citations

Non-volatile Memory, Resistive Ram, Engineering +17