J. A. Bradley - Concepedia

Author

J. A. Bradley

IBM Research - Thomas J. Watson Research Center

Also Known As

J. A. Bradley, J. Bradley, J.A. Bradley

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center Sandia National Laboratories Newcastle University IBM (United States)

About

J. A. Bradley is an author at IBM Research - Thomas J. Watson Research Center specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	17	1.4K
2	Applied Physics	16	17	1.4K
3	Chemistry	4	4	642
4	Natural Sciences	3	3	489
5	Electrical Engineering	3	3	49

J. A. Bradley

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Pressure dependence of shallow bound states in gallium arsenide D. J. Wolford, J. A. Bradley Solid State Communications Pressure DependenceEngineeringPhysicsApplied PhysicsQuantum Materials	1985	246
Surface-Enhanced Raman Spectroscopy and Surface Plasmons J. C. Tsang, J. R. Kirtley, J. A. Bradley Physical Review Letters Materials SciencePlasmonicsOptical MaterialsSurface-enhanced Raman SpectroscopyEngineering	1979	194
Pressure dependence of GaAs/Al<i>x</i>Ga1−<i>x</i>As quantum-well bound states: The determination of valence-band offsets D. J. Wolford, T. F. Kuech, J. A. Bradley, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena SemiconductorsSemiconductor TechnologyPressure DependenceEngineeringPhysics	1986	193
Surface-Enchanced Raman Scattering from Pyridine on Ag(111) P. N. Sanda, J. M. Warlaumont, J. E. Demuth, Physical Review Letters Optical MaterialsEngineeringSurface-enhanced Raman ScatteringChemistrySurface-enchanced Raman	1980	156
Properties of high-purity Al<i>x</i>Ga1−<i>x</i>As grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors T. F. Kuech, D. J. Wolford, E. Veuhoff, Journal of Applied Physics Materials ScienceMaterials EngineeringEpitaxial GrowthHigh Temperature MaterialsPrimary Impurity	1987	153
Dependence of the Al<i>x</i>Ga1−<i>x</i>As band edge on alloy composition based on the absolute measurement of <i>x</i> T. F. Kuech, D. J. Wolford, R. M. Potemski, Applied Physics Letters Aluminium NitrideEngineeringAlloy CompositionChemistryAbsolute Measurement	1987	139
Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structures M. A. Gell, D. Ninno, M. Jaroš, Physical review. B, Condensed matter Optical MaterialsEngineeringMultiple-quantum-well StructuresSemiconductor NanostructuresSemiconductors	1987	96
Efficient visible luminescence from hydrogenated amorphous silicon D. J. Wolford, B. A. Scott, Jeffrey A. Reimer, Physica B+C Efficient Visible LuminescenceMaterials SciencePhotoluminescenceEngineeringOptical Properties	1983	52
Intrinsic recombination and interface characterization in ‘‘surface-free’’ GaAs structures D. J. Wolford, G. D. Gilliland, T. F. Kuech, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsMaterials ScienceSemiconductor TechnologyOptical MaterialsEngineering	1991	35
Direct measurement of heavy-hole exciton transport in type-II GaAs/AlAs superlattices G. D. Gilliland, Alex Antonelli, D. J. Wolford, Physical Review Letters Kinetics ResultsQuantum ScienceSemiconductor TechnologyWide-bandgap SemiconductorEngineering	1993	34

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