Tae-Kwang Eom

Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O[sub 2]

Tae-Kwang Eom, Windu Sari, Kyu-Jeong Choi et al. · Electrochemical and Solid-State Letters · 2009 · 68 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Improvement of the Diffusion Barrier Performance of Ru by Incorporating a WN[sub x] Thin Film for Direct-Plateable Cu Interconnects

Windu Sari, Tae-Kwang Eom, Chan-Wook Jeon et al. · Electrochemical and Solid-State Letters · 2009 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +17

Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH[sub 3] Plasma

Windu Sari, Tae-Kwang Eom, Soo‐Hyun Kim · Journal of The Electrochemical Society · 2010 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +17

Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition

Tae-Kwang Eom, Soo‐Hyun Kim, Kye-Sun Park et al. · Electrochemical and Solid-State Letters · 2010 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +14

A bilayer diffusion barrier of Ru/WSixNy for advanced Cu interconnects

Tae-Kwang Eom, Windu Sari, Taehoon Cheon et al. · Thin Solid Films · 2012 · 10 citations

Engineering, Materials Engineering, Materials Science +14