Behzad Ebrahimi

A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies

Mohammad Rashid Ansari, Hassan Afzali-Kusha, Behzad Ebrahimi et al. · Integration · 2015 · 77 citations

Read Margins, Non-volatile Memory, Electrical Engineering +8

A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement

Mehdi Saremi, Behzad Ebrahimi, Ali Afzali‐Kusha et al. · Microelectronics Reliability · 2011 · 48 citations

Electrical Engineering, Engineering, High Voltage Engineering +5

A single-ended low leakage and low voltage 10T SRAM cell with high yield

Nima Eslami, Behzad Ebrahimi, Erfan Shakouri et al. · Analog Integrated Circuits and Signal Processing · 2020 · 44 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +8

Process variation study of Ground Plane SOI MOSFET

Mehdi Saremi, Behzad Ebrahimi, Ali Afzali Kusha et al. · 2010 · 32 citations

Device Modeling, Electrical Engineering, Process Variation Study +11

Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage

Behzad Ebrahimi, Masoud Rostami, Ali Afzali‐Kusha et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2010 · 29 citations

Low-power Electronics, Electrical Engineering, Physical Design (Electronics) +10