I. M. Watson

Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes

Zheng Gong, Shirong Jin, Yujie Chen et al. · Journal of Applied Physics · 2010 · 320 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +20

Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes

Pengfei Tian, Jonathan J. D. McKendry, Zheng Gong et al. · Applied Physics Letters · 2012 · 304 citations

Engineering, Optoelectronic Devices, Integrated Circuits +16

Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping

S. Pereira, M. R. Correia, E. Pereira et al. · Applied Physics Letters · 2002 · 236 citations

Wide-bandgap Semiconductor, Engineering, Strain Gradients +17

Colloidal quantum dot random laser

Yujie Chen, Johannes Herrnsdorf, Benoit Guilhabert et al. · Optics Express · 2011 · 140 citations · Full text

Materials Science, Photonics, Quantum Science +15

Hybrid Inorganic/Organic Semiconductor Heterostructures with Efficient Non‐Radiative Energy Transfer

G. Heliotis, Grigorios Itskos, R. Murray et al. · Advanced Materials · 2006 · 128 citations

Semiconductors, Inorganic Electronics, Engineering +13