Hybrid Inorganic/Organic Semiconductor Heterostructures with Efficient Non‐Radiative Energy Transfer

Abstract

An inorganic/organic hybrid semiconductor heterostructure is reported, in which an InGaN quantum well is non-radiatively coupled to a semiconducting polymer overlayer (see Figure). This architecture has the potential to take advantage of the complementary attributes of the two types of semiconductor that it contains, and may lead to devices with highly efficient emission across the entire visible spectrum.