21:I[432972,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/30036bedc5269936.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/cd5e572bc3e4eb92.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/d4ac9dcf27f6ff52.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 22:T46b,A new mode of controlled magnetic-domain propagation has been discovered. With this technique either serrated domain boundaries or small single-wall domains can be propagated along the hard axis of an anisotropic thin film. The drive line for either case is a hairpin-shaped wire located adjacent to the film and parallel to both the film plane and the hard axis. Bipolar current pulses applied to the drive line in conjunction with a dc or pulsed hard-axis bias field are used to control propagation. The bias and drive fields are chosen to provide the necessary asymmetry for preferential propagation. Displacement of domain-wall boundaries in one direction of 2000 to 5000 Å per cycle are obtained. Both modes of propagation have been observed in 900 to 2250 Å NiFe and NiFeCo films. NiFe and NiFeCo films used for the experiments had dispersions (α90) ranging from 0.5° to 5°. Varying the film to drive-line spacing from 0.5 to 5 mil or skewing the film ±20° with respect to the drive line did not prevent domain propagation. Interpretation of these effects and experimental data defining operating conditions are given.23:T495,A 3648-bit memory, based on bubble technology, has been designed and constructed. This moderately high-density design, 600 bit/mm ² , serves as a test vehicle for proposed mass memories. The series-parallel organization utilizes 38 transfer gates that are simultaneously activated by reverse rotation of the drive field. Forty-eight words of 76 bits each can be stored and randomly accessed. The storage medium is Gd 2.34 ,Tb 0.66 Fe 5 O 12 , and T-bar propagating circuits are used. The design and operation of the memory is described. The operating margins are given. Underlying design principles and criteria for propagating circuits have evolved and are presented.

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	203
2	Applied Physics	4	4	122
3	Natural Sciences	2	2	89
4	Social Sciences	1	1	10
5	Cognitive Science	1	1	10

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