Quincy Li

12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-V<inf>MIN</inf> applications

Jonathan Chang, Yen-Huei Chen, Wei-Min Chan et al. · 2017 · 62 citations

Low-power Electronics, Continued Area Scaling, Electrical Engineering +15

15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V_MIN Applications

Jonathan Chang, Yen-Huei Chen, Gary Chan et al. · 2020 · 47 citations

Engineering, Vlsi Design, Sram Bit Cell +16

A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-<i>V</i> _MIN Applications

Tsung-Yung Jonathan Chang, Yen-Huei Chen, Wei-Min Chan et al. · IEEE Journal of Solid-State Circuits · 2020 · 33 citations

Low-power Electronics, Charge-sharing Lower Cell-vdd, Electrical Engineering +14

A 45-nm Dual-Port SRAM Utilizing Write-Assist Cells Against Simultaneous Access Disturbances

Jui-Jen Wu, Meng‐Fan Chang, Shau-Wei Lu et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 2012 · 18 citations

Wa8t Testchip, Non-volatile Memory, Electrical Engineering +10

Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM

Yen-Huei Chen, Shao-Yu Chou, Quincy Li et al. · IEEE Journal of Solid-State Circuits · 2012 · 16 citations

Bit-line Swing, Electrical Engineering, Engineering +12