Wei-Min Chan

A 16 nm 128 Mb SRAM in High-$\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications

Yen-Huei Chen, Wei-Min Chan, Hung-Jen Liao et al. · IEEE Journal of Solid-State Circuits · 2014 · 135 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-V<inf>MIN</inf> applications

Jun-Hao Chang, Yen-Huei Chen, Hsu-Yung Cheng et al. · 2013 · 67 citations

Engineering, Computer Engineering, Electrical Engineering +17

12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-V<inf>MIN</inf> applications

Jonathan Chang, Yen-Huei Chen, Wei-Min Chan et al. · 2017 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 0.6V 45nm adaptive dual-rail SRAM compiler circuit design for lower VDD_min VLSIs

Y.H. Chen, Wei-Min Chan, Shau-Yu Chou et al. · 2008 · 41 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-<i>V</i> _MIN Applications

Tsung-Yung Jonathan Chang, Yen-Huei Chen, Wei-Min Chan et al. · IEEE Journal of Solid-State Circuits · 2020 · 34 citations

Engineering, Computer Engineering, Electrical Engineering +16