Wei-Min Chan

A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-V<inf>MIN</inf> applications

Jun-Hao Chang, Yen-Huei Chen, Hsu-Yung Cheng et al. · 2013 · 64 citations

Engineering, Vlsi Design, Emerging Memory Technology +17

12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-V<inf>MIN</inf> applications

Jonathan Chang, Yen-Huei Chen, Wei-Min Chan et al. · 2017 · 62 citations

Low-power Electronics, Continued Area Scaling, Electrical Engineering +15

A 0.6V 45nm adaptive dual-rail SRAM compiler circuit design for lower VDD_min VLSIs

Y.H. Chen, Wei-Min Chan, Shau-Yu Chou et al. · 2008 · 40 citations

Low-power Electronics, Hardware Security, Electrical Engineering +13

A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-<i>V</i> _MIN Applications

Tsung-Yung Jonathan Chang, Yen-Huei Chen, Wei-Min Chan et al. · IEEE Journal of Solid-State Circuits · 2020 · 33 citations

Low-power Electronics, Charge-sharing Lower Cell-vdd, Electrical Engineering +14

Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM

Yen-Huei Chen, Shao-Yu Chou, Quincy Li et al. · IEEE Journal of Solid-State Circuits · 2012 · 16 citations

Bit-line Swing, Electrical Engineering, Engineering +12