Man‐Young Park

Solution-Processable LaZrO_<i>x</i>/SiO₂ Gate Dielectric at Low Temperature of 180 °C for High-Performance Metal Oxide Field-Effect Transistors

So Yeon Je, Byeong-Geun Son, Hyun-Gwan Kim et al. · ACS Applied Materials & Interfaces · 2014 · 73 citations

Engineering, Materials Engineering, Materials Science +16

Comparison of Tetrakis(dimethylamido)titanium and Tetrakis(diethylamido)titanium as Precursors for Metallorganic Chemical Vapor Deposition of Titanium Nitride

Ju‐Young Yun, Man‐Young Park, Shi‐Woo Rhee · Journal of The Electrochemical Society · 1999 · 54 citations · Full text

Natural Sciences, Chemistry, Materials Science +17

A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors

Hyeon Joo Seul, Hyun-Gwan Kim, Man‐Young Park et al. · Journal of Materials Chemistry C · 2016 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Optimization of a Solution-Processed SiO₂ Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

Yesul Jeong, Christopher Pearson, Hyun-Gwan Kim et al. · ACS Applied Materials & Interfaces · 2015 · 34 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Growth rate and microstructure of copper thin films deposited with metal-organic chemical vapor deposition from hexafluoroacetylacetonate copper(I) allyltrimethylsilane

Jong-Hoon Son, Man‐Young Park, Shi‐Woo Rhee · Thin Solid Films · 1998 · 28 citations

Natural Sciences, Materials Engineering, Materials Science +16