Concepedia
Statistics
Publications
11
Citations
277
H-Index
10
Active since
2006
Affiliations
Schott (Germany)(Current)
Technical University of Munich
Helmholtz Zentrum München
Justus-Liebig-Universität Gießen
John Howgate is an author at Schott (Germany) specializing in engineering, materials science, and semiconductor devices.
Publications per year
2006–2014
Catalytic activity of enzymes immobilized on AlGaN∕GaN solution gate field-effect transistors
Barbara Baur, John Howgate, H.-G. von Ribbeck et al. · Applied Physics Letters · 2006 · 67 citations
Life Sciences, Biochemistry, Bioengineering +17
Organic Functionalization of 3C-SiC Surfaces
Sebastian J. Schoell, Matthias Sachsenhauser, Alexandra Oliveros et al. · ACS Applied Materials & Interfaces · 2013 · 40 citations
Natural Sciences, Chemistry, Materials Science +17
Photocatalytic Cleavage of Self‐Assembled Organic Monolayers by UV‐Induced Charge Transfer from GaN Substrates
John Howgate, Sebastian J. Schoell, Marco Hoeb et al. · Advanced Materials · 2010 · 31 citations
Natural Sciences, Materials Engineering, Materials Science +17
In vitro bio-functionality of gallium nitride sensors for radiation biophysics
Markus Hofstetter, John Howgate, Martin Schmid et al. · Biochemical and Biophysical Research Communications · 2012 · 30 citations
Engineering, Biomedical Engineering, Biophysics +9
Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage
Ana Bengoechea Encabo, John Howgate, M. Stutzmann et al. · Sensors and Actuators B Chemical · 2009 · 26 citations
Engineering, Electrical Engineering, Materials Science +14
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