A. Golański - Concepedia

Author

A. Golański

Centre National de la Recherche Scientifique

Also Known As

A Golanski, A. Golanski, A. Golański, André Golanski, Lawrence Livermore

Publications

658

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique National Microelectronics Applications Centre (Ireland)Chemnitz University of Technology Orange (France)McMaster University

About

A. Golański is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	19	501
2	Applied Physics	13	19	499
3	Natural Sciences	2	2	82
4	Chemistry	2	2	125
5	Electrical Engineering	2	2	29

A. Golański

Publications

543

Citations

H-Index

Page 1

	Year	Citations
Disorder production and amorphisation in ion implanted silicon Dylan Thompson, A. Golański, K. H. Haugen, Radiation Effects Materials ScienceIon ImplantationDisorder ProductionEngineeringPhysics	1980	97
Creation and annealing kinetics of magnetic oxygen vacancy centers in SiO2 R. A. B. Devine, A. Golański Journal of Applied Physics EngineeringChemistrySilicon On InsulatorDefect ToleranceMagnetoresistance	1983	67
Transpolyacetylene chains in hydrogenated amorphous carbon films free of nanocrystalline diamond Fabrice Piazza, A. Golański, S. Schulze, Applied Physics Letters Materials ScienceDiamond-like CarbonNanosheetEngineeringElectronic Materials	2003	58
Irreversible and reversible annealing of paramagnetic oxygen vacancies (<i>E</i>′1 centers) in oxygen-implanted amorphous SiO2 A. Golański, R. A. B. Devine, J.C. Oberlin Journal of Applied Physics Paramagnetic ResonanceEngineeringParamagnetic Oxygen VacanciesOptoelectronic DevicesDefect Tolerance	1984	37
Damage created in silicon by BF+ (1≤ n ≤ 3) and PF+ (1⪯ n:≤ 5) implantations A. Grob, Jean‐Jacques Grob, A. Golański Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms	1987	29
High temperature oxygen implantation in silicon: Soil structure formation characteristics S. Maillet, R. Stuck, J.J. Grob, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceEngineeringApplied PhysicsSemiconductor Device FabricationSilicon On Insulator	1987	28
Annealing of heavy ion cascade damage in silicon Dylan Thompson, A. Golański, H. K. Haugen, Radiation Effects Materials ScienceIon ImplantationEngineeringPhysicsCrystalline Defects	1980	27
Dynamics of defect creation by ion implantation in thermal SiO2 R. A. B. Devine, A. Golański Journal of Applied Physics Materials ScienceDefect ToleranceMaterials EngineeringOxygen VacancyEngineering	1984	22
Stress field effects on the microstructure and properties of <i>a</i>-C:H thin films A. Golański, Fabrice Piazza, J. Werckmann, Journal of Applied Physics Thin Film PhysicsEngineeringThin Film Process TechnologyStress Field EffectsH Thin Films	2002	18
Formation kinetics of MoSi2 induced by cw scanned laser beam G. Bomchil, D. Bensahel, A. Golański, Applied Physics Letters Materials ScienceMaterials EngineeringIi-vi SemiconductorEpitaxial GrowthEngineering	1982	18

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