A. Golański

Disorder production and amorphisation in ion implanted silicon

Dylan Thompson, A. Golański, K. H. Haugen et al. · Radiation Effects · 1980 · 97 citations

Materials Science, Ion Implantation, Disorder Production +14

Creation and annealing kinetics of magnetic oxygen vacancy centers in SiO2

R. A. B. Devine, A. Golański · Journal of Applied Physics · 1983 · 67 citations

Engineering, Chemistry, Silicon On Insulator +19

Transpolyacetylene chains in hydrogenated amorphous carbon films free of nanocrystalline diamond

Fabrice Piazza, A. Golański, S. Schulze et al. · Applied Physics Letters · 2003 · 58 citations

Materials Science, Diamond-like Carbon, Nanosheet +15

Irreversible and reversible annealing of paramagnetic oxygen vacancies (<i>E</i>′1 centers) in oxygen-implanted amorphous SiO2

A. Golański, R. A. B. Devine, J.C. Oberlin · Journal of Applied Physics · 1984 · 37 citations

Paramagnetic Resonance, Engineering, Paramagnetic Oxygen Vacancies +18

Damage created in silicon by BF+ (1≤ n ≤ 3) and PF+ (1⪯ n:≤ 5) implantations

A. Grob, Jean‐Jacques Grob, A. Golański · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 29 citations