John Ransom

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Active since

2020

Affiliations

John Ransom is an author at X-Fab (United States) specializing in integrated circuit design, output characteristics, and semiconductor device materials.

Publications per year

2020–2021

Publications

Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

Kijeong Han, Aditi Agarwal, Ajit Kanale et al. · 2020 · 52 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs

James A. Cooper, Dallas Morisette, Madankumar Sampath et al. · IEEE Transactions on Electron Devices · 2021 · 12 citations

Engineering, Electrical Engineering, Microelectronics +16

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