Nagaboopathy Mohan

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering

Sayak Dutta Gupta, Ankit Soni, Vipin Joshi et al. · IEEE Transactions on Electron Devices · 2019 · 48 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +13

Discovery of carbon nanotubes in sixth century BC potteries from Keeladi, India

Manivannan Kokarneswaran, Prakash Selvaraj, Thennarasan Ashokan et al. · Scientific Reports · 2020 · 40 citations · Full text

Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs

Nayana Remesh, Nagaboopathy Mohan, Srinivasan Raghavan et al. · IEEE Transactions on Electron Devices · 2020 · 39 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

Nagaboopathy Mohan, Manikant, Rohith Soman et al. · Journal of Applied Physics · 2015 · 20 citations

Wide-bandgap Semiconductor, Engineering, Dislocations Densities +16

Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model

Nayana Remesh, Nagaboopathy Mohan, Sandeep Kumar et al. · IEEE Transactions on Electron Devices · 2018 · 17 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15