T. Lauinger

Record low surface recombination velocities on 1 Ω cm <i>p</i>-silicon using remote plasma silicon nitride passivation

T. Lauinger, Jan Schmidt, Armin G. Aberle et al. · Applied Physics Letters · 1996 · 286 citations

Materials Science, Surface Technology, Ion Implantation +15

Optimization and characterization of remote plasma-enhanced chemical vapor deposition silicon nitride for the passivation of p-type crystalline silicon surfaces

T. Lauinger, J. Moschner, Armin G. Aberle et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 108 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +18

Industrial high performance crystalline silicon solar cells and modules based on rear surface passivation technology

A. Metz, Dennis Adler, S. Bagus et al. · Solar Energy Materials and Solar Cells · 2013 · 90 citations

Electrical Engineering, Engineering, Organic Solar Cell +7

Comprehensive study of rapid, low-cost silicon surface passivation technologies

A. Rohatgi, P. Doshi, J. Moschner et al. · IEEE Transactions on Electron Devices · 2000 · 68 citations

Emitter Sheet Resistance, Engineering, Sin Film +16

Injection-level dependent surface recombination velocities at the silicon-plasma silicon nitride interface

Armin G. Aberle, T. Lauinger, Jan Schmidt et al. · Applied Physics Letters · 1995 · 60 citations

Engineering, Optoelectronic Devices, Integrated Circuits +17