Andreas Hössinger

Growth rates of dry thermal oxidation of 4H-silicon carbide

Vito Šimonka, Andreas Hössinger, Josef Weinbub et al. · Journal of Applied Physics · 2016 · 38 citations

Engineering, Oxidation Resistance, Material Simulation +16

ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation

Vito Šimonka, Andreas Hössinger, Josef Weinbub et al. · The Journal of Physical Chemistry A · 2017 · 35 citations

Carbon Emission, Engineering, Oxidation Resistance +17

The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy

Alexander Toifl, Michael Quell, Xaver Klemenschits et al. · IEEE Access · 2020 · 20 citations · Full text

Engineering, Level-set Method, Anisotropic Etching +17

Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide

Vito Šimonka, Alexander Toifl, Andreas Hössinger et al. · Journal of Applied Physics · 2018 · 18 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Materials +18

Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces

Paul Manstetten, Josef Weinbub, Andreas Hössinger et al. · Procedia Computer Science · 2017 · 14 citations · Full text

Numerical Analysis, Engineering, Geometry +23