D. Wörle

Evaluation of the Coulomb energy for single-electron interface trapping in sub-μm metal-oxide-semiconductor field-effect transistors

H. H. Mueller, D. Wörle, M. Schulz · Journal of Applied Physics · 1994 · 46 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Formation of amorphous layers by solid-state reaction. from thin Ir films on Si(100)

V. Demuth, H. P. Strunk, D. Wörle et al. · Applied Physics A · 1999 · 20 citations

Materials Science, Amorphous Layers, Engineering +9

Amorphous and crystalline IrSi Schottky barriers on silicon

D. Wörle, H. Grünleitner, V. Demuth et al. · Applied Physics A · 1998 · 10 citations

Semiconductor Material, Applied Physics, Amorphous Solid +1

Tayloring of the Schottky barrier height of Pt-Ir mixed silicide infrared detectors

P. Lahnor, D. Wörle, Michael Schulz · Applied Physics A · 1996 · 10 citations

Pt-ir Mixed Silicide, Schottky Barrier Height, Engineering +9