Statistics
Publications
3
Citations
480
H-Index
3
Active since
1977
Affiliations
R. L. Mattis is an author at National Institute of Standards and Technology specializing in device modeling, semiconductor materials, and semiconductor characterization.
Publications per year
1977–1980
3
3
Resistivity‐Dopant Density Relationship for Phosphorus‐Doped Silicon
W. R. Thurber, R. L. Mattis, Y. M. Liu et al. · Journal of The Electrochemical Society · 1980 · 247 citations · Full text
Resistivity‐Dopant Density Relationship for Boron‐Doped Silicon
W. R. Thurber, R. L. Mattis, Y. M. Liu et al. · Journal of The Electrochemical Society · 1980 · 210 citations
1–3 of 3