Zoe L. Bushell

Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

Igor P. Marko, Peter Ludewig, Zoe L. Bushell et al. · Journal of Physics D Applied Physics · 2014 · 61 citations

Growth of Ga(AsBi) on GaAs by continuous flow MOVPE

Peter Ludewig, Zoe L. Bushell, L. Nattermann et al. · Journal of Crystal Growth · 2014 · 60 citations

Electrical Engineering, Engineering, Applied Physics +2

Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers

Igor P. Marko, S. R. Jin, K. Hild et al. · Semiconductor Science and Technology · 2015 · 39 citations

Engineering, Laser Applications, Laser Material +16

Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors

A. D. Prins, Michael K. Lewis, Zoe L. Bushell et al. · Applied Physics Letters · 2015 · 32 citations · Full text

Pressure-dependent Photoluminescence, Engineering, Laser Science +19

Determination of type-I band offsets in GaBi_<i>x</i>As_1–<i>x</i>quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations

Christopher A. Broderick, Patrick E. Harnedy, Peter Ludewig et al. · Semiconductor Science and Technology · 2015 · 30 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15