L. Nattermann

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

Peter Ludewig, Nikolai Knaub, N. Hossain et al. · Applied Physics Letters · 2013 · 147 citations · Full text

Engineering, Laser Applications, Laser Material +16

Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

Igor P. Marko, Peter Ludewig, Zoe L. Bushell et al. · Journal of Physics D Applied Physics · 2014 · 61 citations

Growth of Ga(AsBi) on GaAs by continuous flow MOVPE

Peter Ludewig, Zoe L. Bushell, L. Nattermann et al. · Journal of Crystal Growth · 2014 · 60 citations

Electrical Engineering, Engineering, Applied Physics +2

Efficient nitrogen incorporation in GaAs using novel metal organic As–N precursor di-tertiary-butyl-arsano-amine (DTBAA)

E. Sterzer, Andreas Beyer, Lennart Duschek et al. · Journal of Crystal Growth · 2016 · 19 citations

Materials Science, Chemical Engineering, Engineering +4

MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors

L. Nattermann, Peter Ludewig, Lars Meckbach et al. · Journal of Crystal Growth · 2015 · 18 citations

Materials Science, Engineering, Crystal Growth Technology +4