T. Schmidtling

<i>In situ</i> monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry

S. Peters, T. Schmidtling, T. Trepk et al. · Journal of Applied Physics · 2000 · 52 citations

Materials Science, Electrical Engineering, Engineering +11

Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy

H. A. McKay, R. M. Feenstra, T. Schmidtling et al. · Applied Physics Letters · 2001 · 47 citations · Full text

Materials Science, Ii-vi Semiconductor, Engineering +13

Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy

H. A. McKay, R. M. Feenstra, T. Schmidtling et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 25 citations · Full text

Materials Science, Ii-vi Semiconductor, Engineering +11

Spectroscopic ellipsometry during metalorganic vapor phase epitaxy of InN

T. Schmidtling, M. Drago, Udo W. Pohl et al. · Journal of Crystal Growth · 2002 · 23 citations

Engineering, Surface Science, Applied Physics +4

Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry

Christoph Cobet, T. Schmidtling, M. Drago et al. · Journal of Applied Physics · 2003 · 19 citations · Full text

Wide-bandgap Semiconductor, Engineering, Movpe Surfaces +16