Özgür Kelekçi̇ - Concepedia

Author

Özgür Kelekçi̇

Bilkent University ORCID

Also Known As

Kelekci Ozgur, O. Kelekci, Ozgur Kelekci, Ö. Kelekci, Özgür Kelekci, Özgür Kelekçi, Özgür Kelekçi̇

Publications

482

Citations

H-Index

Concepts

All Affiliations

Bilkent University Sejong University Gazi University Universidad de Oviedo University of Surrey

ÖK

About

Özgür Kelekçi̇ is an author at Bilkent University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	6	6	190
2	Engineering	5	5	115
3	Materials Science	4	4	89
4	Electrical Engineering	2	2	41
5	Materials Engineering	1	1	10

Özgür Kelekçi̇

Publications

448

Citations

H-Index

Page 1

	Year	Citations
Supersymmetry and non-Abelian T-duality in type II supergravity Özgür Kelekçi̇, Yolanda Lozano, Niall T. Macpherson, Classical and Quantum Gravity	2015	96
Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures Engin Arslan, Yasemin Şafak, Ş. Altındal, Journal of Non-Crystalline Solids PhysicsAluminum Gallium NitrideApplied PhysicsGan Power DeviceCategoryiii-v Semiconductor	2010	75
An alternative IIB embedding of F(4) gauged supergravity Jaehoon Jeong, Özgür Kelekçi̇, Eoin Ó Colgáin Journal of High Energy Physics Gauge TheoryAlternative Iib EmbeddingQuantum Field TheorySupergravity	2013	67
The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder Muhammad Zahir Iqbal, Özgür Kelekçi̇, Muhammad Waqas Iqbal, Carbon Materials ScienceElectrical EvolutionGraphene NanomeshesGraphene-based Nano-antennasEngineering	2013	49
Large superconformal near-horizons from M-theory Özgür Kelekçi̇, Yolanda Lozano, Jesús Montero, Physical review. D/Physical review. D. Large Superconformal Near-horizonsM-theorySupergravityPhysicsExtremal Black Hole	2016	49
Classical Yang-Baxter equation from supergravity Ilya Bakhmatov, Özgür Kelekçi̇, Eoin Ó Colgáin, Physical review. D/Physical review. D.	2018	46
Improvement of breakdown characteristics in AlGaN/GaN/Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N HEMT based on a grading Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N buffer layer Hongbo Yu, S.B. Lişesivdin, Basar Bolukbas, physica status solidi (a) Wide-bandgap SemiconductorBreakdown CharacteristicsElectrical EngineeringEngineeringGan Buffer	2010	26
Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD Özgür Kelekçi̇, P. Tasli, Saime Şebnem Çetin, Current Applied Physics Materials ScienceAluminium NitrideElectrical EngineeringWide-bandgap SemiconductorEngineering	2012	15
Enhanced intervalley scattering in artificially stacked double-layer graphene Muhammad Zahir Iqbal, Özgür Kelekçi̇, Muhammad Waqas Iqbal, New Journal of Physics Materials ScienceGraphene NanomeshesEngineeringPhysicsNanomaterials	2014	15
Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC P. Caban, Włodek Strupiński, J. Szmidt, Journal of Crystal Growth Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringApplied Physics	2010	10

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