Birte‐Julia Godejohann

AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution

Birte‐Julia Godejohann, Erdin Ture, S. Müller et al. · physica status solidi (b) · 2017 · 38 citations

Engineering, Materials Engineering, Materials Science +17

High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

Erdin Ture, Peter Brückner, Birte‐Julia Godejohann et al. · IEEE Journal of the Electron Devices Society · 2015 · 36 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Broadband E-Band Power Amplifier MMIC Based on an AlGaN/GaN HEMT Technology with 30 dBm Output Power

Dirk Schwantuschke, Birte‐Julia Godejohann, Steffen Breuer et al. · 2016 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Advanced Front Side Metallization for Crystalline Silicon Solar Cells Based on a Fully Plated Contact

Jonas Bartsch, A. Mondon, Birte‐Julia Godejohann et al. · Fraunhofer-Publica (Fraunhofer-Gesellschaft) · 2010 · 16 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

Simon Kotzea, Wiebke Witte, Birte‐Julia Godejohann et al. · Electronics · 2019 · 12 citations · Full text

Engineering, Electrical Engineering, Materials Science +17