G. Bentoumi

How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy

B. Daudin, G. Feuillet, Jörg Hübner et al. · Journal of Applied Physics · 1998 · 66 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Use of GEANT4 vs. MCNPX for the characterization of a boron-lined neutron detector

B.M. van der Ende, J. Atanackovic, A. Erlandson et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2016 · 43 citations

Evaluation of CLYC-6 and CLYC-7 scintillators for detection of nuclear materials

D. Pérez–Loureiro, O. Kamaev, G. Bentoumi et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2021 · 23 citations

Engineering, Radiation Detection, Physics +11

Organometallic vapor phase epitaxy of GaAs1−xNx alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation

J.-N. Beaudry, R. A. Masut, P. Desjardins et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2004 · 19 citations

Lattice Parameter Variation, Engineering, Crystal Growth Technology +16

Damage evolution in low-energy ion implanted silicon

Rachid Karmouch, Yonathan Anahory, Jean-François Mercure et al. · Physical Review B · 2007 · 19 citations

Materials Science, Electrical Engineering, Electronic Devices +15