Michael A. Turi

Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating

Michael A. Turi, J.G. Delgado-Frias · IEEE Transactions on Circuits & Systems II Express Briefs · 2019 · 51 citations

Non-volatile Memory, Near-threshold Operation, Engineering +18

High-Performance Low-Power Selective Precharge Schemes for Address Decoders

Michael A. Turi, J.G. Delgado-Frias · IEEE Transactions on Circuits & Systems II Express Briefs · 2008 · 26 citations

Low-power Electronics, Hardware Security, Engineering +8

Low power SRAM cell design for FinFET and CNTFET technologies

J.G. Delgado-Frias, Zhe Zhang, Michael A. Turi · International Conference on Green Computing · 2010 · 24 citations

Non-volatile Memory, Engineering, Vlsi Design +16

Full-VDD and near-threshold performance of 8T FinFET SRAM cells

Michael A. Turi, J.G. Delgado-Frias · Integration · 2016 · 19 citations

Electrical Engineering, Engineering, Vlsi Design +4

SRAM leakage in CMOS, FinFET and CNTFET technologies

Zhe Zhang, Michael A. Turi, J.G. Delgado-Frias · 2012 · 16 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +12