D.H. Navon

Two-dimensional carrier flow in a transistor structure under nonisothermal conditions

S.P. Gaur, D.H. Navon · IEEE Transactions on Electron Devices · 1976 · 96 citations

Engineering, Power Electronics, Semiconductor Device +16

Numerical simulation and comparison of Si BJTs and Si/sub 1-x/Ge/sub x/ HBTs

Branimir Pejčinović, L. E. Kay, Ting-wei Tang et al. · IEEE Transactions on Electron Devices · 1989 · 66 citations

Device Modeling, Electrical Engineering, Strained Alloy Layers +14

Transistor design and thermal stability

S.P. Gaur, D.H. Navon, R.W. Teerlinck · IEEE Transactions on Electron Devices · 1973 · 48 citations

Device Modeling, Electrical Engineering, Engineering +15

Time-dependent carrier flow in a transistor structure under nonisothermal conditions

V.C. Alwin, D.H. Navon, L.J. Turgeon · IEEE Transactions on Electron Devices · 1977 · 34 citations

Engineering, Transistor Operating, Thermal Delay Time +16

Recombination and trapping of carriers in germanium

Heng Fan, D.H. Navon, H.A. Gebbie · Physica · 1954 · 32 citations

Quantum Science, Engineering, Physics +4