Hyun‐Wook Jung

Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga₂O₃ MOSFETs with Source-Connected Field Plate

Jae Kyoung Mun, Kyujun Cho, Woojin Chang et al. · ECS Journal of Solid State Science and Technology · 2019 · 133 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +15

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Sung‐Jae Chang, Dong‐Seok Kim, Tae‐Woo Kim et al. · Nanomaterials · 2020 · 14 citations · Full text

The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors

Jae-Won Do, Hyun‐Wook Jung, Min Jeong Shin et al. · Thin Solid Films · 2017 · 10 citations

Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

Jong‐Min Lee, Ho-Kyun Ahn, Hyun‐Wook Jung et al. · Journal of the Korean Physical Society · 2017 · 10 citations

Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al₂O₃Bi-Layer Passivation

Sung‐Jae Chang, Hyun‐Wook Jung, K. J. Cho et al. · ECS Journal of Solid State Science and Technology · 2018 · 10 citations