Y.Y. Wang

Physical mechanisms of endurance degradation in TMO-RRAM

B. Chen, Yang Lu, Bin Gao et al. · 2011 · 163 citations

Electrical Engineering, Physical Origins, Engineering +10

Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

Bin Gao, Shimeng Yu, Nuo Xu et al. · 2008 · 79 citations

Non-volatile Memory, Electrical Engineering, New Ion-transport-recombination Model +12

Oxide-based RRAM: Physical based retention projection

Bin Gao, Jinfeng Kang, Huangwei Zhang et al. · 2010 · 47 citations

Electrical Engineering, Engineering, Retention Failure Behavior +9

Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology

Bin Gao, Huangwei Zhang, Shimeng Yu et al. · Symposium on VLSI Technology · 2006 · 31 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Micro torsion mirror actuated by compound electrostatic driving structure

Wengang Wu, Q.H. Chen, G.Z. Yan et al. · Sensors and Actuators A Physical · 2006 · 11 citations

Engineering, Soft Robotics, Microfabrication +8