Yang Lu

Physical mechanisms of endurance degradation in TMO-RRAM

B. Chen, Yang Lu, Bin Gao et al. · 2011 · 166 citations

Engineering, Materials Engineering, Materials Science +13

An electronic silicon-based memristor with a high switching uniformity

Yang Lu, Ana Álvarez, Chung-Ho Kao et al. · Nature Electronics · 2019 · 93 citations

Engineering, Electrical Engineering, Materials Science +13

A physical based analytic model of RRAM operation for circuit simulation

Peng Huang, Xianjv Liu, W. H. Li et al. · 2012 · 50 citations

Engineering, Computer Engineering, Electrical Engineering +17

Scalability of voltage-controlled filamentary and nanometallic resistance memory devices

Yang Lu, Jong-Ho Lee, I‐Wei Chen · Nanoscale · 2017 · 33 citations

Engineering, Materials Engineering, Materials Science +16

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

Yang Lu, Bin Gao, Yihan Fu et al. · IEEE Electron Device Letters · 2012 · 31 citations

Engineering, Electrical Engineering, Materials Science +17