Yu. N. Sveshnikov

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

A. E. Belyaev, V. N. Ivanov, V.P. Kladko et al. · Semiconductors · 2008 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +16

Superfast high-current switching of GaAs avalanche transistor

Sergey N. Vainshtein, Juha Kostamovaara, Yu. N. Sveshnikov et al. · Electronics Letters · 2004 · 22 citations

Engineering, Electrical Engineering, Materials Science +13

Long-term transformation of GaN/Al2O3 defect subsystem induced by weak magnetic fields

R.A. Redko, V. V. Shvalagin, Svitlana Redko et al. · Journal of Luminescence · 2014 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +13

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz

V. G. Mokerov, Yu. V. Fedorov, A. Yu. Pavlov et al. · Semiconductors · 2009 · 15 citations

Engineering, Electrical Engineering, Materials Science +14

Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

V.P. Kladko, S. V. Chornen’kii, A. V. Komarov et al. · Semiconductors · 2006 · 13 citations

Engineering, Materials Engineering, Materials Science +17