J. F. Nützel - Concepedia

Author

J. F. Nützel

Schott (Germany)

Also Known As

J F Nutzel, J Nutzel, J Nützel, J. F. Nutzel, J. F. Nützel, J. Nutzel, J. NÜtzel, J. Nützel, J.F Nützel, J.F. Nützel

Publications

895

Citations

H-Index

Concepts

All Affiliations

Schott (Germany)Technical University of Munich Johannes Kepler University of Linz

About

J. F. Nützel is an author at Schott (Germany) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	676
2	Applied Physics	11	12	676
3	Materials Science	6	6	371
4	Electrical Engineering	3	3	219
5	Chemistry	1	1	34

J. F. Nützel

Publications

702

Citations

H-Index

Page 1

	Year	Citations
Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100) P. Schittenhelm, M. Gail, J. Brunner, Applied Physics Letters EngineeringOptoelectronic DevicesSilicon On InsulatorSemiconductor NanostructuresSemiconductors	1995	177
Electroluminescence of erbium–oxygen-doped silicon diodes grown by molecular beam epitaxy J. Stimmer, A. Reittinger, J. F. Nützel, Applied Physics Letters SemiconductorsPhotonicsElectrical EngineeringElectronic DevicesOptical Materials	1996	148
Segregation and diffusion on semiconductor surfaces J. F. Nützel, G. Abstreiter Physical review. B, Condensed matter SemiconductorsMaterials ScienceLow TemperaturesEngineeringPhysics	1996	69
Medium-wavelength, normal-incidence, <i>p</i>-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K P. Kruck, M. Helm, Thomas Fromherz, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesOptical CharacterizationSemiconductors	1996	60
Second-harmonic generation in asymmetric Si/SiGe quantum wells M. Seto, M. Helm, Ziad Moussa, Applied Physics Letters SemiconductorsPhotonicsQuantum ScienceCategoryquantum ElectronicsEngineering	1994	42
Oblique roughness replication in strained SiGe/Si multilayers V. Holý, Anton A. Darhuber, J. Stangl, Physical review. B, Condensed matter Materials ScienceSurface CharacterizationOblique ReplicationOblique Roughness ReplicationEngineering	1998	37
Comparison of P and Sb as <i>n</i>-dopants for Si molecular beam epitaxy J. F. Nützel, G. Abstreiter Journal of Applied Physics Materials ScienceSemiconductorsEpitaxial GrowthEngineeringElectronic Materials	1995	34
Phosphorous doping in low temperature silicon molecular beam epitaxy E. Friess, J. F. Nützel, G. Abstreiter Applied Physics Letters Materials ScienceSemiconductorsEngineeringElectronic MaterialsCrystalline Defects	1992	31
Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in <i>p</i>-type SiGe quantum wells Thomas Fromherz, P. Kruck, M. Helm, Applied Physics Letters Quantum PhotonicsEngineeringOptoelectronic DevicesSemiconductorsSubband Absorption	1996	26
Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy J. Brunner, J. F. Nützel, M. Gail, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceIi-vi SemiconductorPhonon ReplicaPhotoluminescenceBand Gap Luminescence	1993	23

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