J. F. Nützel

Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

P. Schittenhelm, M. Gail, J. Brunner et al. · Applied Physics Letters · 1995 · 177 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +17

Electroluminescence of erbium–oxygen-doped silicon diodes grown by molecular beam epitaxy

J. Stimmer, A. Reittinger, J. F. Nützel et al. · Applied Physics Letters · 1996 · 148 citations

Semiconductors, Photonics, Electrical Engineering +15

Segregation and diffusion on semiconductor surfaces

J. F. Nützel, G. Abstreiter · Physical review. B, Condensed matter · 1996 · 69 citations

Semiconductors, Materials Science, Low Temperatures +13

Medium-wavelength, normal-incidence, <i>p</i>-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K

P. Kruck, M. Helm, Thomas Fromherz et al. · Applied Physics Letters · 1996 · 60 citations

Optical Materials, Engineering, Optoelectronic Devices +19

Second-harmonic generation in asymmetric Si/SiGe quantum wells

M. Seto, M. Helm, Ziad Moussa et al. · Applied Physics Letters · 1994 · 42 citations

Semiconductors, Photonics, Quantum Science +14