Segregation and diffusion on semiconductor surfaces

Abstract

The surface segregation of phosphorus, antimony, and boron in Si molecular-beam epitaxy is investigated experimentally at low temperatures. Rate and temperature dependent measurements are explained by a segregation model, which connects surface segregation with surface diffusion. The model is found to explain quantitatively many available data of segregation on different semiconductor surfaces, explicitly: Si, Ge, and GaAs. \textcopyright{} 1996 The American Physical Society.