Benjamin R. Conley

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Seyed Amir Ghetmiri, Wei Du, Joe Margetis et al. · Applied Physics Letters · 2014 · 219 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +15

Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection

Benjamin R. Conley, Aboozar Mosleh, Seyed Amir Ghetmiri et al. · Optics Express · 2014 · 88 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +22

Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

Wei Du, Yiyin Zhou, Seyed Amir Ghetmiri et al. · Applied Physics Letters · 2014 · 82 citations

Electrical Engineering, Solid-state Lighting, Engineering +13

Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

Wei Du, Seyed Amir Ghetmiri, Benjamin R. Conley et al. · Applied Physics Letters · 2014 · 80 citations

Transient Grating, Optical Materials, Engineering +18

Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 <i>μ</i>m long-wavelength cutoff

Benjamin R. Conley, Joe Margetis, Wei Du et al. · Applied Physics Letters · 2014 · 78 citations · Full text

Engineering, Optoelectronic Devices, Integrated Circuits +21