Statistics
Publications
15
Citations
930
H-Index
14
Active since
2012
Benjamin R. Conley is an author at University of Arkansas at Fayetteville specializing in materials science, engineering, and semiconductor materials.
Publications per year
2012–2022
15
15
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
Seyed Amir Ghetmiri, Wei Du, Joe Margetis et al. · Applied Physics Letters · 2014 · 228 citations
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