Martin Rambach

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Carmelo Lo Vecchio, Sushant Sonde, Corrado Bongiorno et al. · Nanoscale Research Letters · 2011 · 61 citations · Full text

Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide

Martin Rambach, A. J. Bauer, H. Ryssel · physica status solidi (b) · 2008 · 45 citations

Materials Science, Graphite Crucible, Electrical Engineering +15

An X-ray photoelectron spectroscopy study of ultra-thin oxynitride films

S. Ladas, L. Sygellou, Michael O. Wolf et al. · Thin Solid Films · 2011 · 16 citations

Materials Science, Engineering, Ultra-thin Oxynitride Films +5

Implantation and annealing of aluminum in 4H silicon carbide

Martin Rambach, Frank Schmid, M. Krieger et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2005 · 13 citations

Materials Engineering, Materials Science, Ion Implantation +6

Impurity Conduction in Silicon Carbide

M. Krieger, Kurt Semmelroth, Heiko B. Weber et al. · Materials science forum · 2007 · 12 citations

Materials Engineering, Semiconductors, Materials Science +14